國立陽明交通大學 電子物理系
National Yang Ming Chiao Tung University
Department of Electrophysics
NYCU
Faculty
Wei-Kuo Chen
Professor
Ph.D. Institute of Electrical Engineering, State University of New York ,USA (1990)
Office
Science Building III, 460
Tel.
(03)5712121#56125
Lab.
Solid-State Quantum Photonics Laboratory
Science Building III, SC 754 Ext. 56145
Biography
Experience
Expertise
Interest
Publications
1981
B.S. Electrophysics, National Chiao Tung University
1985
M.S. Institute of Electrical Engineering, State University of New York, USA
1990
Ph.D. Institute of Electrical Engineering, State University of New York, USA
2021/02 -
Professor, Department of Electrophysics, National Yang Ming Chiao Tung University
2016/08 - 2018/07
Chairman, Department of Electrophysics, National Chiao Tung University
1998/08 - 2021/01
Professor, Department of Electrophysics, National Chiao Tung University
1990/08 - 1998/07
Associate Professor, Department of Electrophysics, National Chiao Tung University
  1. Semiconductor physics and devices
  2. Optoelectronics Near-field emission microscopy
  3. Nanostructures.
  1. Semiconductor physics and devices
  2. Optoelectronics
  3. Near-field emission microscopy
  4. Nanostructures
  1. Lai YJ (Lai, Y. J.), Yang CS (Yang, C. S.), Chen WK (Chen, W. K.), Lee MC (Lee, M. C.), Chang WH (Chang, W. H.), Chou WC (Chou, W. C.), Wang JS (Wang, J. S.), Huang WJ (Huang, W. J.), Jeng ES (Jeng, Erik S.), “Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots “,(2007) Appl. Phys. Lett. 90, 083116, Feb. 2007.
  2. W. C. Ke, L. Lee, C. Y. Chen, W. C. Tsai, W.-H. Chang*, W. C. Chou, M. C. Lee, “Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy”, Appl. Phys. Lett. 89, 263117, Dec. 2006.
  3. Lee L, Ku CS, Ke WC, Ho CW, Huang HY, Lee MC, Chen WH, Chou WC, Chen WK, “Current properties of GaNV-defect using conductive atomic force microscopy”, Jpn. J. Appl. Phys. 45, L817, Aug. 2006.
  4. Ke WC, Fu CP, Chen CY, Lee L, Ku CS, Chou WC, Chang WH, Lee MC, Chen WK, Lin WJ, Cheng YC, “Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy”, Appl. Phys. Lett. 88, 191913, May 2006.
  5. Ke WC, Fu CP, Huang CC, Ku CS, Lee L, Chen CY, Tsai WC, Chen WK, Lee MC, Chou WC, Lin WJ, Cheng YC, “Optical properties and carrier dynamics of self-assembled GaN/Al0.11Ga0.89N quantum dots”, Nanotechnology 17, 2609, May 2006.
  6. Lai YJ, Lin YC, Fu CP, Yang CS, Chia CH, Chuu DS, Chen WK, Lee MC, Chou WC, Kuo MC, Wang JS, “Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy”, J. Cryst. Growth 286, 338, Jan. 2006.
  7. Chen SH, Hou SP, Hsieh JH, Chang FC, Chen WK, “Advanced electrical imaging of dislocations in Mg-In-codoped GaN films”, J. Vac. Sci. Technol. B 24, 108, Jan. 2006.
  8. C. S. Yang, Y. J. Lai, W. C. Chou*, W. K. Chen, M.-C. Lee, M. C. Kuo, J. Lee, J. L. Shen, D. J. Jang, and Y. C. Cheng, “Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy”, J. Appl. Phys. 97(3), 033514, 2005.
  9. F. C. Chang, W. C. Chou, W. H. Chen, M.-C. Lee, W. K. Chen*, and H. Y. Huang, “Photoluminescence studies of In-doped GaN: Mg films”, Jpn. J. Appl. Phys. 44, 754, 2005.
  10. H. Y. Huang, C. S. Ku, W. Z. Ke, N. E. Tang, W. K. Chen, W. H. Chen, M.-C. Lee, “Spatially-resolved photoluminescence studies of V-shaped pits on Al0.16Ga0.84N”, J. Appl. Phys. 95, 2172-2174, 2004.