Faculty
Wen-Hsiung Chen
Adjunct Professor
Ph.D. in Physics, University of Oregon, USA
Office
Science Building III, 557
Tel.
(03) 5712121#56113
Expertise
Publications
  1. Low Temperature Physics
  2. Optics technology
  1. Lee L (Lee, Lino), Ku CS (Ku, Ching-Shun), Ke WC (Ke, Wen-Cheng), Ho CW (Ho, Chih-Wei), Huang HY (Huang, Huai-Ying), Lee MC (Lee, Ming-Chih), Chen WH (Chen, Wen-Hsiung), Chou WC (Chou, Wu-Chin), Chen WK (Chen, Wei-Kuo) , “Current properties of GaNV-defect using conductive atomic force microscopy ” , Jpn. J. Appl. Phys. 45 (29-32): L817-L820 , 2006
  2. Chang FC, Chou WC, Chen WH, Lee MC, Chen WK, Huang HY , “Photoluminescence studies of In-doped GaN : Mg films” , Jpn. J. Appl. Phys. 44 (10): 7504-7506 , 2005
  3. Ke WC, Ku CS, Huang HY, Chen WC, Lee L, Chen WK, Chou WC, Chen WH, Lee MC, Lin WJ, Cheng YC, Cherng YI , “Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films ” , Appl. Phys. Lett. 85 (15): 3047-3049, 2004
  4. Ku CS, Peng JM, Ke WC, Huang HY, Tang NE, Chen WK, Chen WH, Lee MC , “Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AlGaN/GaN films ” , Appl. Phys. Lett. 85 (14): 2818-2820 , 2004
  5. Ke WC, Huang HY, Ku CS, Yen KH, Lee L, Chen WK, Chou WC, Lee MC, Chen WH, Lin WJ, Cheng YC, Cherng YT , “Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors ” , Jpn. J. Appl. Phys. 43 (6B): L780-L783, 2004
  6. Huang HY, Ku CS, Ke WC, Tang NE, Peng JM, Chen WK, Chen WH, Lee MC, Lee HY , ” Spatially-resolved photoluminescence studies of V-shaped pits on Al0.16Ga0.84N ” , J. Appl. Phys. 95 (4): 2172-2174 , 2004
  7. Lee WH, Huang HY, Chen WC, Lee CF, Chen WK, Chen WH, Lee MC , “Growth temperature reduction for isoelectronic As-doped GaN” , Jpn. J. Appl. Phys. 42 (3A): L239-L242 , 2003
  8. Lee L, Lee WC, Chung HM, Lee MC, Chen WH, Chen WK, Lee HY , “Characteristics of deep levels in As-implanted GaN films ” , Appl. Phys. Lett. 81 (10): 1812-1814 , 2003
  9. Chang FC, Shen KC, Chung HM, Lee MC, Chen WH, Chen WK , “Characteristics of p-type GaN films doped with isoelectronic indium atoms Characteristics of p-type GaN films doped with isoelectronic indium atoms ” , Chin. J. Phys. 40 (6): 637-643 , 2002
  10. Huang HY, Xiao JQ, Ku CS, Chung HM, Chen WK, Chen WH, Lee MC, Lee HY, “Rapid thermal annealing effects on blue luminescence of As-implanted GaN ” , J. Appl. Phys. 92 (7): 4129-4131 , 2002