國立陽明交通大學 電子物理系
National Yang Ming Chiao Tung University
Department of Electrophysics
NYCU
Faculty
Jenn-Fang Chen
Professor
Ph.D. in Electrical Engineering, State University of New York at Buffalo, USA
Office
Science Building III, 558
Tel.
(03) 5712121#56124
Lab.
Semiconductor Measurement Laboratory
Science Building III, SC 706, 758 Ext. 56152
NYCU Academic Hub
Biography
Experience
Expertise
Interest
Publications
1985 - 1989
Ph.D. Electric Engineering, State University of New York at Buffalo, USA
2021/02 -
Professor, Department of Electrophysics, National Yang Ming Chiao Tung University
2006/08 - 2008/07
Chairman, Department of Electrophysics, National Chiao Tung University
1996/08 - 2021/01
Professor, Department of Electrophysics, National Chiao Tung University
1991/08 - 1996/07
Associate Professor, Department of Electrophysics, National Chiao Tung University
1989 - 1991
Postdoctor, AT&T Bell Laboratory
  1. Compound Semiconductors
  2. Semiconductor Physics and Devices.
  1. Molecular Beam Epitaxial growth
  2. Electrical characterizations of III-V compound semiconductor nanostructures
  3. Strain relaxation in InAs quantum dots
  1. J. F. Chen, Ross C. C. Chen, C. H. Chiang, Y. F. Chen, Y. H. Wu, and L. Chang “Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer” Appl. Phys. Lett, 97, 092110, 2010.
  2. J. F. Chen, R. S. Hsiao, W. D. Huang, Y. H. Wu, L. Chang, J. S. Wang, and J. Y. Chi “Strain relaxation and induced defects in InAsSb self-assembled quantum dots” Appl. Phys. Lett. 88, 233113, 2006.
  3. C. C. Chang, J. F. Chen, S. W. Hwang, and C. H. Chen, “Highly efficient white organic electroluminescent devices based on tandem architecture” Appl. Phys. Lett., 87, 253501, 2005.
  4. J. F. Chen, R. S. Hsiao, Y. P. Chen J. S. Wang, and J. Y. Chi “Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling” Appl. Phys. Lett. 87, 141911, 2005.
  5. Y.S. Wang, J. F. Chen, P. Y. Wang, and X. J. Guo “Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots” Appl. Phys. Lett. 77, 3027, 2000.
  6. J. F. Chen, P. Y. Wang, C. Y. Tsai, J. S. Wang and N. C. Chen “Observation of carrier depletion and emission effects in capacitance dispersion in relaxed InGaAs/GaAs quantum well” Appl. Phys. Lett., 75, 2461, 1999.