國立陽明交通大學 電子物理系
National Yang Ming Chiao Tung University
Department of Electrophysics
NYCU
Faculty
Wei-I Lee
Professor
Ph.D. in Electrical Engineering , Rensselaer Polytechnic Institute , USA
Office
Science Building III, SC 560
Tel.
(03)5712121#31773
Lab.
Science Building III, SC 706, 756 Ext. 56161
NYCU Academic Hub
Biography
Experience
Expertise
Publications
1981
B.S., Department of Electrophysics, Natl. Chiao Tung U.
1985
M.S., Electrical Engineering, U. of Wisconsin-Madison.
1988
Ph.D., Electrical Engineering, Rensselaer Polytechnic Institute, USA
2021/02 -
Professor, Department of Electrophysics, Natl. Yang Ming Chiao Tung U.
1997/08 - 2021/01
Professor, Department of Electrophysics, Natl. Chiao Tung U.
1991/08 - 1997/07
Associate Prof., Department of Electrophysics, Natl. Chiao Tung U.
1988 - 1991
Engineer, Varian Associates Research Center
  1. Optoelectronic Semiconductor Devices and Physics
  2. Semiconductor Nano-structures.
  1. Yin-Hao Wu, Chuo-Han Lee, Chung-Ming Chu, Yen-Hsien Yeh, Chan-Lin Chen, and Wei-I Lee (2013, Aug). A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, (52) 08JB08.
  2. Yen-Hsien Yeh, Kuei-Ming Chen, Yin-Hao Wu, Ying-Chia Hsu, Tzu-Yi Yu, and Wei-I Lee (2011, Oct). Hydrogen etching of GaN and its application to produce free-standing GaN thick films. J. Cryst. Growth, 333 (2011) 16–19. NSC 99- 2119-M-009-005-MY3.
  3. Kuei-Ming Chen, Yin-Hao Wu, Yen-Hsien Yeh, Chen-Hao Chiang, Kuei-You Chen, and Wei-I Lee (2011, Mar). Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy. J. Cryst. Growth, 318 (2011) 454–459. NSC 98-2221-E-009-026.
  4. C.H. Chiang, K.M. Chen, Y.H. Wu, Y.S. Yeh, W.I. Lee, J.F. Chen, K.L. Lin, Y.L. Hsiao, W.C. Huang, and E.Y. Chang (2011, Jan). Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer bymetalorganic chemical vapor deposition. Appl. Surf. Lett., 257 (2011) 2415–2418. NSC 96-2112-M-009-034- MY3.
  5. Yen-Hsien Yeh, Kuei-Ming Chen, Yin-HaoWu, Ying-Chia Hsu and Wei-I Lee (2011, Jan). Hydrogen etching on the surface of GaN for producing patterned structures. J. Cryst. Growth, 314 (2011) 9–12. NSC 99-2119-M-009-005-MY3.
  6. Kuei-Ming Chen, Yen-Hsien Yeh, Yin-Hao Wu, Chen-Hao Chiang, Din-Ru Yang, Chu-Li Chao,Tung-Wei Chi, Yen-Hsang Fang, Jenq-Dar Tsay, Wei-I Lee (2010, Dec). Method for Modulating the Wafer Bow of Free-standing GaN Substrates via Inductively Coupled Plasma Etching. J. Cryst. Growth, 312 (2010) 3574– 3578. NSC 98-2221-E-009-026.
  7. Kuei-Ming Chen, Yen-Hsien Yeh, Yin-Hao Wu, Chen-Hao Chiang, Din-Ru Yang, Zhong-Shan Gao, Chu-Li Chao, Tung-Wei Chi, Yen-Hsang Fang, Jenq-Dar Tsay, and Wei-I Lee (2010, Sep). Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy. Jpn. J. Appl. Phys, 49 (2010) 091001. NSC 98-2221-E-009-026.
  8. Kuei-Ming Chen, Hsin-Hsiung Huang, Yi-Lin Kuo, Pei-Lun Wu, Ting-Li Chu,Hung-Wei Yu, and Wei-I Lee (2009, May). Effective reduction of bowing in free- standing GaN by N-face regrowth with hydride vapor-phase epitaxy. J. Cryst. Growth, 311 (2009) 3037–3039. NSC 95-2662-E-009-011.
  9. Hsin-Hsiung Huang*, Chu-Li Chao, Tung-Wei Chi, Yu-Lin Chang, Po-Chun Liu,Li-Wei Tu, Jenq-Dar Tsay, Hao-Chung Kuo, Shun-Jen Cheng*, Wei-I Lee (2009, Jan). Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure. J. Cryst. Growth , 311 (2009) 3029– 3032. (SCI). NSC 97-2622-E-009-002.