Electrical characterizations of III-V compound semiconductor nanostructures
Strain relaxation in InAs quantum dots
J. F. Chen, Ross C. C. Chen, C. H. Chiang, Y. F. Chen, Y. H. Wu, and L. Chang “Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer” Appl. Phys. Lett, 97, 092110, 2010.
J. F. Chen, R. S. Hsiao, W. D. Huang, Y. H. Wu, L. Chang, J. S. Wang, and J. Y. Chi “Strain relaxation and induced defects in InAsSb self-assembled quantum dots” Appl. Phys. Lett. 88, 233113, 2006.
C. C. Chang, J. F. Chen, S. W. Hwang, and C. H. Chen, “Highly efficient white organic electroluminescent devices based on tandem architecture” Appl. Phys. Lett., 87, 253501, 2005.
J. F. Chen, R. S. Hsiao, Y. P. Chen J. S. Wang, and J. Y. Chi “Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling” Appl. Phys. Lett. 87, 141911, 2005.
Y.S. Wang, J. F. Chen, P. Y. Wang, and X. J. Guo “Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots” Appl. Phys. Lett. 77, 3027, 2000.
J. F. Chen, P. Y. Wang, C. Y. Tsai, J. S. Wang and N. C. Chen “Observation of carrier depletion and emission effects in capacitance dispersion in relaxed InGaAs/GaAs quantum well” Appl. Phys. Lett., 75, 2461, 1999.
